The Effect of Nickel Doping on Calculation of the Optical Gap Energy and Urbach Energy in ZnO Thin Films

Investigation of new calculate depends on the controlled optical properties of nanomaterials. Understanding the growth mechanism and growth parameters of nanostructured materials is essential. ZnO is one of the most important semiconductor materials for its semiconducting characteristics. In the present paper, we investigated a new model by theoretical methods; it is based on correlation from the experimental data’s which was used in the calculation the optical gap energy and Urbach energies. These data’s were taken from papers previously published. From obtained relations found that the experimental data and theoretical calculation are in qualitative, which were supported with the variation of solution molarities and Nickel doping. We have obtained a high correlation coefficient in the estimation of the band gap energy is higher than 0.96 with compare of Urbach energy is changed from 0.84 of undoped to Ni doped ZnO film at 0.88. The measurements by these new models have agreed with minimum relative errors, it is found in the calculations of optical band gap does not exceed 4 %, and for Urbach energy are smaller than 20 and 10 % for undoped and Nickel doped ZnO films, respectively. So that the best estimation was found at the Nickel doped ZnO thin with maximum enhancement of minimum errors were limited to 3.3 and 13 % for the band gap and the Urbach energies, respectively. The decreases in the relative errors of undoped to Nickel doped films can be explained by the fewer defects and less disorder.